The usual mechanical and chemical methods fail
when you have to remove different kind of layers
from a compound semiconductor wafer. Our special removal step is the key process in our production. We are removing all layers without damaging the substrate. This is mandatory to achieve lowest possible substrate loss.
A multi step polishing process produces atomically flat surfaces. All process and handling induced defects are removed. Interferometric measurement proves surface roughness of less than 1 nm. Single-side and double-side chemo-mechanical planarisation processes are available. Quality control ensures excellent wafer-to-wafer uniformity.
Wafer cleaning and particle control is performed in our clean room, Epi-Ready conditioning and sealed packaging ensures long shelf lifetime. Our wafer can be used in epitaxy directly without any additional pretreatment!
High yield - Low thickness loss
Continuous process improvements enable
high yields of up to 99,5% and low thickness loss. Substrate removal is depending on incoming geometry, damage depth and thickness differences of the wafer (in case of small volume orders). Thickness loss of less than 1µm can be achieved.
- Polishing of raw slices
- Inexpensive special made wafer
- extra thin slices (e.g.: 2" GaAs 60 micron)
- Backside thinning
- Polishing of epitaxial layers
- We buy used wafer and sell reclaimed wafer